features center amplifying gate metal case with ceramic insulator international standard case to-200ac (b-puk) high profile hockey-puk typical applications dc motor controls controlled dc power supplies ac controllers i t(av) 650 a @ t hs 55 c i t(rms) 1230 a @ t hs 25 c i tsm @ 50hz 9000 a @ 60hz 9420 a i 2 t@ 50hz 405 ka 2 s @ 60hz 370 ka 2 s v drm /v rrm 400 to 2000 v t q typical 100 s t j - 40 to 125 c parameters st330c..l units major ratings and characteristics case style to-200ac (b-puk) 650a phase control thyristors hockey puk version st330c..l series 1 bulletin i25154 rev. d 04/03 www.irf.com
st330c..l series 2 bulletin i25154 rev. d 04/03 www.irf.com di/dt max. non-repetitive rate of rise gate drive 20v, 20 ? , t r 1s of turned-on current t j = t j max, anode voltage 80% v drm gate current 1a, di g /dt = 1a/s v d = 0.67% v drm , t j = 25c i tm = 550a, t j = t j max, di/dt = 40a/s, v r = 50v dv/dt = 20v/s, gate 0v 100 ?, t p = 500s parameter st330c..l units conditions switching 1000 a/s t d typical delay time 1.0 t q typical turn-off time 100 s i t(av) max. average on-state current 650 (314) a 180 conduction, half sine wave @ heatsink temperature 55 (75) c double side (single side) cooled i t(rms) max. rms on-state current 1230 dc @ 25c heatsink temperature double side cooled i tsm max. peak, one-cycle 9000 t = 10ms no voltage non-repetitive surge current 9420 a t = 8.3ms reapplied 7570 t = 10ms 100% v rrm 7920 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 405 t = 10ms no voltage initial t j = t j max. 370 t = 8.3ms reapplied 287 t = 10ms 100% v rrm 262 t = 8.3ms reapplied i 2 t maximum i 2 t for fusing 4050 ka 2 s t = 0.1 to 10ms, no voltage reapplied v t(to) 1 low level value of threshold voltage v t(to) 2 high level value of threshold voltage r t1 low level value of on-state slope resistance r t2 high level value of on-state slope resistance v tm max. on-state voltage 1.90 v i pk = 1730a, t j = t j max, t p = 10ms sine pulse i h maximum holding current 600 i l typical latching current 1000 0.91 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 0.57 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 0.57 (i > x i t(av) ),t j = t j max. parameter st330c..l units conditions 0.93 (i > x i t(av) ),t j = t j max. on-state conduction ka 2 s v m ? ma t j = 25c, anode supply 12v resistive load voltage v drm /v rrm , max. repetitive v rsm , maximum non- i drm /i rrm max. type number code peak and off-state voltage repetitive peak voltage @ t j = t j max vvma 04 400 500 08 800 900 st2330c..l 12 1200 1300 50 14 1400 1500 16 1600 1700 18 1800 1900 20 2000 2100 electrical specifications voltage ratings
st330c..l series 3 bulletin i25154 rev. d 04/03 www.irf.com t j max. operating temperature range -40 to 125 t stg max. storage temperature range -40 to 150 r thj-hs max. thermal resistance, 0.11 dc operation single side cooled junction to heatsink 0.06 dc operation double side cooled r thc-hs max. thermal resistance, 0.011 dc operation single side cooled case to heatsink 0.005 dc operation double side cooled f mounting force, 10% 9800 n (1000) (kg) wt approximate weight 250 g parameter st330c..l units conditions k/w thermal and mechanical specification c case style to - 200ac (b-puk) see outline table k/w dv/dt maximum critical rate of rise of off-state voltage i rrm max. peak reverse and off-state i drm leakage current blocking 500 v/s t j = t j max. linear to 80% rated v drm parameter st330c..l units conditions 50 ma t j = t j max, rated v drm /v rrm applied p gm maximum peak gate power 10.0 t j = t j max, t p 5ms p g(av) maximum average gate power 2.0 t j = t j max, f = 50hz, d% = 50 i gm max. peak positive gate current 3.0 a t j = t j max, t p 5ms +v gm maximum peak positive gate voltage -v gm maximum peak negative gate voltage t j = - 40c ma t j = 25c t j = 125c t j = - 40c vt j = 25c t j = 125c i gd dc gate current not to trigger 10 ma parameter st330c..l units conditions 20 5.0 triggering typ. max. 200 - 100 200 50 - 2.5 - 1.8 3.0 1.1 - v gd dc gate voltage not to trigger 0.25 v max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated v drm anode-to-cathode applied t j = t j max max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12v anode-to-cathode applied v gt dc gate voltage required to trigger i gt dc gate current required to trigger w vt j = t j max, t p 5ms
st330c..l series 4 bulletin i25154 rev. d 04/03 www.irf.com 1 - thyristor 2 - essential part number 3 - 0 = converter grade 4 - c = ceramic puk 5 - voltage code: code x 100 = v rrm (see voltage rating table) 6 - l = puk case to-200ac (b-puk) 7 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) 8 - critical dv/dt: none = 500v/sec (standard selection) l = 1000v/sec (special selection) ordering information table device code 5 1 2 3 4 st 33 0 c 16 l 1 7 6 8 single side double side single side double side 180 0.012 0.010 0.008 0.008 t j = t j max. 120 0.014 0.015 0.014 0.014 90 0.018 0.018 0.019 0.019 k/w 60 0.026 0.027 0.027 0.028 30 0.045 0.046 0.046 0.046 sinusoidal conduction rectangular conduction conduction angle units conditions ? r thj-hs conduction (the following table shows the increment of thermal resistence r thj-hs when devices operate at different conduction angles than dc)
st330c..l series 5 bulletin i25154 rev. d 04/03 www.irf.com outline table fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics 20 30 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 dc 30 60 90 120 180 average on-state current (a) conduction period maximum allowable heatsink temperature (c) st330c..l series (single side cooled) r (dc) = 0.11 k/ w thj-hs 30 40 50 60 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 400 450 30 60 90 120 180 average on-state current (a) conduction angle maximum allowable heatsink temperature (c) st330c..l series (single side cooled) r (dc) = 0.11 k/ w thj-hs case style to-200ac (b-puk) all dimensions in millimeters (inches) two places pin receptacle amp. 60598-1 0.7 (0.03) min. 34 (1.34) dia. max. 53 (2.09) dia. max. 58.5 (2.3) dia. max. 2 holes dia. 3.5 (0.14) x 2.5 (0.1) deep 4.7 (0.18) 27 (1.06) max. 0.7 (0.03) min. 6.2 (0.24) min. 20 5 36.5 (1.44) crepage distance 36.33 (1.430) min. strike distance 17.43 (0.686) min. quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification)
st330c..l series 6 bulletin i25154 rev. d 04/03 www.irf.com 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) in it ia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j st330c..l series at any rated load condition and with rated v applied following surge. rrm 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 0.01 0.1 1 pulse train duration (s) versus pulse train duration. control peak half sine wave on-state current (a) init ia l t = 125c no voltage reapplied rated v reapplied rrm j st330c..l series maximum non repetitive surge current of conduc tion may not be maintained. 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 0 200 400 600 800 1000 1200 1400 dc 180 120 90 60 30 rm s lim it conduction period maximum average on-state power loss (w) average on-state current (a) st330c..l series t = 125c j fig. 7 - maximum non-repetitive surge current single and double side cooled fig. 8 - maximum non-repetitive surge current single and double side cooled 20 30 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 30 60 90 120 180 average on-state current (a) conduction angle maximum allowable heatsink temperature (c) st330c..l series (double side cooled) r (dc) = 0.05 k/ w thj-hs fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics fig. 6- on-state power loss characteristics fig. 5- on-state power loss characteristics 20 30 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 1200 1400 dc 30 60 90 120 180 average on-state current (a) conduction period maximum allowable heatsink temperature (c) st330c..l series (double side cooled) r (dc) = 0.05 k/ w thj-hs 0 200 400 600 800 1000 1200 1400 1600 0 100 200 300 400 500 600 700 800 180 120 90 60 30 rm s li m i t conduc tion angle maximum average on-state power loss (w) average on-state current (a) st330c..l se ries t = 125c j
st330c..l series 7 bulletin i25154 rev. d 04/03 www.irf.com fig. 9 - on-state voltage drop characteristics fig. 10 - thermal impedance z thj-hs characteristics fig. 11 - gate characteristics 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd ig d (b) (a) tj=25 c tj = 1 2 5 c tj = - 4 0 c (2) (3) in st a n t a n e o u s g a t e c u rre n t ( a ) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for <=30% rated di/ dt : 10v, 10ohms frequenc y limited by pg(av) rated d i/ dt : 20v, 10ohms; tr<=1 s tr<=1 s (1) (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms (4) pgm = 60w, t p = 0.66m s rectangular gate pulse de vic e: st330c..l se rie s (4) 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) thj-hs st330c..l series steady state value r = 0.11 k/ w (single side cooled) r = 0.05 k/ w (double side cooled) (dc operation) thj-hs thj-hs transient thermal impedance z (k/w) instantaneous on-state voltage (v) instantaneous on-state current (a) 100 1000 10000 01234567 st330c..l series tj = 25?c tj = 125?c
st330c..l series 8 bulletin i25154 rev. d 04/03 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7309 visit us at www.irf.com for sales contact information. 04 /03 data and specifications subject to change without notice. this product has been designed and qualified for industrial level. qualification standards can be found on ir's web site.
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